Dopant Selective Deep Reactive Ion Etching of 4H-SiC Wafer

NASA’s National Space Science Center is seeking a vendor capable of performing dopant‑selective deep reactive ion etching (DRIE) on 4H‑SiC wafers to create high‑aspect‑ratio diaphragms. The work involves processing two 4‑inch, ~350 µm thick wafers that already have a nickel etch mask, etching to a depth of 320 µm to produce 30 µm diaphragms with radii between 300 µm and 900 µm and an aspect ratio of ≥5. Strict surface‑quality criteria are required, including mask artifact limits, thickness uniformity, and side‑wall smoothness. This is a pre‑competition capability‑statement solicitation; no price quotes are accepted at this stage, and the government may award the contract directly to the sole‑source vendor (Biotronics Inc.) if deemed appropriate. • Perform dopant‑selective DRIE on 4H‑SiC wafers to achieve 320 µm depth and 30 µm diaphragm thickness. • Meet stringent quality metrics: ≤5 mask artifacts per diaphragm, ±5 % thickness uniformity, smooth sidewalls, no notching. • Submit a capability statement by 16 Oct 2026 4 p.m. CST; quotes are not evaluated.